| PART |
Description |
Maker |
| V802ME03 |
LOW COST - HIG PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
|
ZCOMM[Z-Communications, Inc]
|
| ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
| IT2002 |
2 to 26.5 GHz dual-channel high-power amplifier
|
Iterra
|
| HMC683LP6C HMC683LP6CE |
HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ LO SWITCH, 0.7 - 1.0 GHz
|
Hittite Microwave Corporation
|
| HMC818LP4E |
GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| SST13LP05 SST13LP05-MLCF SST13LP05-MLCF-K |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SST[Silicon Storage Technology, Inc]
|
| AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
