| PART |
Description |
Maker |
| MP04HBT490-24 MP04HBT490-26 MP04HBT490-28 MP04HBP4 |
Dual Thyristor, Thyristor/Diode Module Advance Information 770 A, 2400 V, SCR
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; No. of Contacts:3; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 770 A, 2400 V, SCR
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; No. of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Male 770 A, 2600 V, SCR
Dual Thyristor, Thyristor/Diode Module Advance Information 770 A, 2800 V, SCR
PT 4C 4#16 SKT RECP
Dual Thyristor Thyristor/Diode Module Advance Information
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| MP04HBN490-18 |
770 A, 1800 V, SCR
|
DYNEX SEMICONDUCTOR LTD
|
| PTFA070601E PTFA070601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
| MHW7292A |
MHW7292A 770 MHz, 29.8 dB Gain, 110-Channel CATV Amplifier Module
|
Motorola
|
| ROS-1700W |
Voltage Controlled Oscillator VCO, 770 MHz - 1700 MHz
|
Panduit, Corp.
|
| WEA1190-0402 |
90 MHz - 770 MHz RF/MICROWAVE SPLITTER, 5 dB INSERTION LOSS
|
SMK CORP
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
|
