| PART |
Description |
Maker |
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5U |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
4 M SRAM (512-kword ? 8-bit)
4 M SRAM (512-kword 垄楼 8-bit)
4 M SRAM (512-kword ′ 8-bit)
|
Renesas Electronics Corporation
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| HT6116 HT6116-70 |
CMOS 2K8-Bit SRAM
CMOS 2K??8-Bit SRAM
CMOS 2Kx8-Bit SRAM
|
HOLTEK[Holtek Semiconductor Inc]
|
| K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7 |
1M X 18 QDR SRAM, 3 ns, PBGA165
512Kx36-bit, 1Mx18-bit QDR SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
