| PART |
Description |
Maker |
| CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM150DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM75TJ-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100DUS-12F |
Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts
|
Powerex Power Semicondu...
|
| CM600HU-24F |
Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM400HU-24F |
Trench Gate Design Single IGBTMOD?/a> 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极
24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| HIP5062DY HIP5062 HIP5062DW |
FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN 10 A DUAL SWITCHING CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, UUC40
Power Control IC Single Chip Dual Switching Power Supply
|
Intersil, Corp.
Intersil Corporation
|
| XC2S200E-6FG676C XC2S200E-6FG676I XC2S200E-6FGG456 |
Second generation ASIC replacement technology
FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA676
100,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA256
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA456
300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 400 MHz, PBGA456
Spartan-IIE FPGA
Product Availability
|
XILINX INC
Xilinx, Inc.
|
