| PART |
Description |
Maker |
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G LBSS139WT3G |
Power MOSFET 200 mAmps, 50 Volts N?Channel SC?0
|
Leshan Radio Company
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| MMBF2202PT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ON Semiconductor
|
| BSS84LT1 BSS84LT1G BSS84L |
Power MOSFET 130 mAmps, 50 Volts
Power MOSFET 130 mA, 50 V
|
ONSEMI[ON Semiconductor]
|
| APT752R4BN-GULLWING |
5.5 A, 750 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
|
| APT751R2BN |
9 A, 750 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
|
| L2N7002LT1 L2N7002LT1G |
Small Signal MOSFET 115 mAmps, 60 Volts
|
LRC[Leshan Radio Company]
|
|
