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HT100008OJ6 - 800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier

HT100008OJ6_118423.PDF Datasheet


 Full text search : 800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
 Product Description search : 800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier


 Related Part Number
PART Description Maker
PC4SD21NTZCF PC4SD21NTZDF PC4SD21NXZCF PC4SD21YXPD VDRM : 800V Zero cross type DIP 6pin Phototriac Coupler for triggering
Sharp Microelectronics of the Americas
Sharp Electrionic Components
LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM L Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米)广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米)广角发光二极管
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
NTE5585 NTE5580 NTE5582 NTE5584 Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
NTE[NTE Electronics]
BD825-16 BD827-10 BD827-6 BD829-6 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
SPA11N80C3 SPP11N80C3 for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Infineon Technologies AG
2SC3153 2SC3153M TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-247VAR 晶体管|晶体管|叩| 800V的五(巴西)总裁| 6A条一(c)|47VAR
POWER TRANSISTORS(6A/800V/100W)
POWER TRANSISTORS(6A,800V,100W)
POWER TRANSISTORS(6A800V100W)
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 RTC Module With CPU Supervisor 时钟模块CPU监控
DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode
MODULE DROP IN FOR XE1203 868MHZ
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB
THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
Intersil, Corp.
XICOR[Xicor Inc.]
LT1361CS8PBF LT1362CSPBF LT1361CS8TR Dual and Quad 50MHz, 800V/µs Op Amps; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C DUAL OP-AMP, 1500 uV OFFSET-MAX, 37 MHz BAND WIDTH, PDSO8
Dual and Quad 50MHz, 800V/µs Op Amps; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C QUAD OP-AMP, 1500 uV OFFSET-MAX, 37 MHz BAND WIDTH, PDSO16
Linear Technology, Corp.
LT1361 LT1361CN8 LT1361CS8 LT1362 LT1362CN LT1362C Dual and Quad 50MHz/ 800V/us Op Amps
OCTAL BUFFERS AND LINE DRIVERS 20-SO 0 to 70
Dual and Quad 50MHz, 800V/us Op Amps
From old datasheet system
Dual and Quad 50MHz, 800V/s Op Amps
Dual and Quad 50MHz, 800V/µs Op Amps
Linear Technology Corporation
LINER[Linear Technology]
X76F640 X76F640A X76F640A-2.7 X76F640AE X76F640AE- Secure SerialFlash
:SEMIPACK-1; Thread size:M5; Centres, fixing:80mm; Current, Itsm:700A; Depth,
DIODE, STANDARD, 80A, 1200V; Voltage, Vrrm:1200V; Current, If av:80A; Case style:SEMIPACK 1; Centres, fixing:80mm; Current, Ifs max:2000A; Current
; Repetitive Reverse Voltage Max, Vrrm:800V; Forward Current Avg Rectified, IF(AV):82A; Forward Voltage Max, VF:1.55V; Package/Case:SEMIPACK 1
Thyristor Diode Module; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
Xfmr Module
http://
XICOR[Xicor Inc.]
FQPF6N80C FQP6N80C 800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
FAIRCHILD[Fairchild Semiconductor]
 
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