| PART |
Description |
Maker |
| ML6701A ML6411A ML6411C ML6101A |
AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML6101A ML6411A |
(ML6101A - ML6701A) AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
Mitsubishi Electric
|
| CL-260TLY CL-270TLY CL-201SYG CL-201TLY CL-201TD C |
LED of super-luminance. Lighting color top high lemon yellow. Typ. wave length 590 nm.
LED of super-luminance. Lighting color super yellow green. Typ. wave length 574 nm.
LED of super-luminance. Lighting color top high orange. Typ. wave length 612 nm.
LED of super-luminance. Lighting color top high red. Typ. wave length 624 nm.
|
CITILED
|
| NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
