| PART |
Description |
Maker |
| MRF158 |
The Broadband RF TMOS? 2W, 500MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP2P50E_D ON2584 |
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semi
|
| MTW14N50E_D ON2679 MTW14N50E |
TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MAAMSS00014SMB-01 MAAMSS00014SMB-02 MAAMSS0014 MAA |
BROADBAND DRIVER AMPLIFIER 500 - 2400 MHZ
|
MACOM[Tyco Electronics]
|
| NMA5109-B1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
| NS5101-A1X |
Broadband Microwave Coaxial Noise Sources 500 MHz to 4000 MHz
|
Micronetics, Inc.
|
| MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
