| PART |
Description |
Maker |
| SGB15N60HS06 |
High Speed IGBT in NPT-technology
|
Infineon Technologies AG
|
| SKB15N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| IGW40N65F5 PG-TO220-3 PG-TO247-3 |
High speed 5 FAST IGBT in TRENCHSTOP 5 technology
|
Infineon Technologies AG
|
| EM78P156EH EM78P156EHAS EM78P156EHKM EM78P156EHM E |
8-bit microprocessor with low-power and high-speed CMOS technology
|
EMC[ELAN Microelectronics Corp]
|
| VSMY2850RG11 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| EM78P153E EM78P153EN EM78P153EP |
EM78P153E is an 8-bit microprocessor with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
|
| SGP30N60HS SGP30N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKB15N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKW30N60HS SKW30N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| VSMY2853G VSMY2853RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
Miniature light barrier
|
Vishay Siliconix
|
