| PART |
Description |
Maker |
| FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FDMC7570S |
25V N-Channel Power Trench® SyncFET™; 8-Power-33; Tape and Reel
N-Channel Power Trench垄莽 SyncFET 25 V, 40 A, 2 m楼?
N-Channel Power Trench? SyncFET 25 V, 40 A, 2 mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FDT86244 |
150V N-Channel Power TrenchMOSFET
N-Channel Power Trench MOSFET
N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| PMV30XN |
20 V, 3.2 A N-channel Trench MOSFET
|
ZP Semiconductor
|
| UTC606P-H UTC606PG-AG6-R |
P-CHANNEL 1.8V TRENCH MOSFET
|
Unisonic Technologies
|
| PMV48XP TO-236AB |
20 V, 3.5 A P-channel Trench MOSFET
20 v, 3.5A P-channel Trench MOSFET
|
NXP Semiconductors
|
| PMN35EN |
30 V, 5.1 A N-channel Trench MOSFET
|
NXP Semiconductors
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET
|
NXP Semiconductors
|
|
