| PART |
Description |
Maker |
| VT82C586A |
PIC Integrated Peripheral Controller
|
ETC[ETC]
|
| MB89396 |
Integrated Peripheral
|
Fujitsu
|
| 82091AA S82091A |
ADVANCED INTEGRATED PERIPHERAL (AIP)
|
INTEL[Intel Corporation]
|
| VT82C596B VT82C596 |
PCI INTEGRATED PERIPHERAL CONTROLLER
|
ETC[ETC]
|
| PIC16LC74A-04/JW PIC16LC74A-04E/P PIC16LC74A-04I/J |
8-BIT, MROM, 4 MHz, RISC MICROCONTROLLER, PDSO28
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|DIP|40PIN|CERAMIC
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|DIP|40PIN|PLASTIC
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|QFP|44PIN|PLASTIC
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|LDCC|44PIN|PLASTIC
Low Loss PowerPath Controller in ThinSOT; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 85°C
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|TQFP|44PIN|PLASTIC
(PIC16LC7X) 8-Bit CMOS Microcontrollers
8-BIT, OTPROM, 10 MHz, RISC MICROCONTROLLER, PDSO28
8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PDIP40
8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PQFP44
PIC16C72/73/73A/74/74A/76/77 Datasheet
8-BIT, MROM, 4 MHz, RISC MICROCONTROLLER, PQFP44 10 X 10 MM, PLASTIC, MQFP-44
|
Microchip Technology, Inc.
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| PIC16C63T-10/SO PIC16C63T-04/SO PIC16C63T-04E/SO P |
8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PQFP44
8-BIT, OTPROM, 20 MHz, RISC MICROCONTROLLER, PDSO18
8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PDIP28
8-BIT, OTPROM, 10 MHz, RISC MICROCONTROLLER, PDSO28
8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PDSO28
8-BIT, OTPROM, 20 MHz, RISC MICROCONTROLLER, PQFP44 10 X 10 MM, PLASTIC, MQFP-44
8-BIT, OTPROM, 10 MHz, RISC MICROCONTROLLER, PQFP44 10 X 10 MM, PLASTIC, MS-026, TQFP-44
PIC16C6X Datasheet
8-BIT, OTPROM, 10 MHz, RISC MICROCONTROLLER, PQCC44
8-BIT, MROM, 20 MHz, RISC MICROCONTROLLER, PDIP28
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|SOP|18PIN|PLASTIC 单片机| 8位|知情同意的CPU |的CMOS |专科| 18PIN |塑料
Microcontroller 微控制器
Zero Drift High Side Current Sense Amplifier; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C
Single/Dual/Quad 60MHz, 20V/µs Low Power, Rail-to-Rail Input and Output Precision Op Amp; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C
White LED Driver in SC70 with Integrated Schottky; Package: SC70; No of Pins: 8; Temperature Range: -40°C to 125°C
Full-Featured LED Driver with 1.5A Switch Current; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 125°C
Triple Output LED Driver; Package: QFN; No of Pins: 28; Temperature Range: -40°C to 125°C
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|DIP|40PIN|PLASTIC
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|QFP|44PIN|PLASTIC
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|DIP|40PIN|CERAMIC
MICROCONTROLLER|8-BIT|PIC CPU|CMOS|LDCC|44PIN|PLASTIC
Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C
Micropower, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 14; Temperature Range: -40°C to 85°C
|
Black Box, Corp.
Microchip Technology, Inc.
Renesas Electronics, Corp.
ITT, Corp.
电流感应放大
|
| LC8953 |
General-Purpose 68000 MPU Peripheral Interface LSI
Programmable Universal Peripheral /Port Expansion Unit(可编程通用外围/端口扩展单元)
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
|
