| PART |
Description |
Maker |
| Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 BPY62-2 BPY |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor PHOTO TRANSISTOR DETECTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-P957 SFH303 SFH303-2 SFH303F SFH303FA-4 SFH |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor PHOTO TRANSISTOR DETECTOR
MB 32C 26#20 6#12 SKT PLUG
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-P1192 Q62702-P1058 BP103BF BP103B Q62702-P8 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter PHOTO TRANSISTOR DETECTOR
TVS BIDIRECT 600W 9.0V SMB PHOTO TRANSISTOR DETECTOR
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silizium - Fototransistor东北大学：叩- Silizium - Fototransistor麻省理工Tageslichtsperrfilter
TVS ZENER BIDIRECT 600W 85V SMB
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MEL79 |
NPN SILICON PHOTO TRANSISTOR
|
Micro Electronics
|
| TPS614 |
PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
|
Toshiba Semiconductor
|
| TPS626 TPS625 |
TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR
|
TOSHIBA[Toshiba Semiconductor]
|
| TPS616 E006914 |
PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| MEL708 |
CONN PLUG 12POS .093 PANEL MOUNT NPN硅光敏三极管
NPN SILICON PHOTO TRANSISTOR
|
Micro Electronics
|
| TPS618 E006916 |
PHOTO TRANSISTOR FOR PHOTO INTERRUPLER
From old datasheet system
|
Toshiba
|
| TLP535 TLP552 |
GaAs IREO & PHOTO-TRANSISTOR 砷化IREO
GaAs IREO & PHOTO-TRANSISTOR 砷化镓IREO
GaAs IREO & PHOTO-TRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
