| PART |
Description |
Maker |
| MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST
36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆
36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| CY7C1511V18-250BZC CY7C1511V18-167BZC |
72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3618CB R1 |
36-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| CY7C1263V18-300BZI |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B- |
36Mb QDR?II SRAM 2-WORD BURST
|
Micron Technology
http://
|
| UPD44165082F5-E60-EQ1 UPD44165182F5-E60-EQ1 UPD441 |
18M-BIT QDRII SRAM 2-WORD BURST OPERATION 1800万位推出QDRII SRAM字爆发运
|
NEC Corp.
NEC, Corp.
|
| CY7C25652KV18-450BZC CY7C25652KV18-450BZXC CY7C256 |
72-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C1264XV18-366BZXC CY7C1264XV18-450BZXC |
36-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| GS8321V36E-133 GS8321V36E-133I GS8321V36E-166I GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 200万1800万3200万36同步突发静态存储器分配36MB
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 6.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 6.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
|
