| PART |
Description |
Maker |
| MAX-WB650 MAX-WB630 |
(MAX-WB630 / MAX-WB650) Mini Audio Torony
|
Samsung
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| 2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC;
General Purpose EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
| RQD-1.805 RQS RQS-93.3 RQD-1.809 RQD-1.81.8 RQD-1. |
0.25 Watt SMD Single & Dual Output
N-Channel Small Signal MOSFETs (20V…800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 55.0 V; RDS (on) (max) (@10V): 650.0 mOhm; RDS (on) (max) (@4.5V): 825.0 mOhm; RDS (on) (max) (@2.5V): -;
0.25 Watt SMD Single & Dual Output 0.25瓦特贴片
CAP Tantalum-Wet Miniature 6V 22.0 uF /-20% Silver can Axial , TPC - Hilton 0.25瓦特贴片
|
RECOM[Recom International Power]
RECOM Power Inc.
RECOM Electronic GmbH
|
| ASOP-77GP ASOP-77FS ASOP-77GS ASOP-77AJ ASOP-77BJ |
OP-AMP, 150 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDIP8 MINI, PLASTIC, DIP-8
OP-AMP, 0.6 MHz BAND WIDTH, PDSO8 0.150 INCH, PLASTIC, SOIC-8
OP-AMP, 60 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, MBCY8 HERMETIC SEALED, METAL CAN, TO-99, 8 PIN
OP-AMP, 120 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, MBCY8 HERMETIC SEALED, METAL CAN, TO-99, 8 PIN
OP-AMP, 45 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, MBCY8 HERMETIC SEALED, METAL CAN, TO-99, 8 PIN
OP-AMP, 100 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, MBCY8 HERMETIC SEALED, METAL CAN, TO-99, 8 PIN
OP-AMP, 100 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDIP8 MINI, PLASTIC, DIP-8
|
Calogic, LLC
|
| AM29LV652D AM29LV652DU90RMAF AM29LV652DU12RMAF AM2 |
128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control
Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.6V; Output Current Max:1A; Output Voltage Max:18V
|
Spansion Inc.
SPANSION LLC
Advanced Micro Devices
|
| 1SS220 |
Low capacitance:Ct = 4.0 pF MAX. High speed switching: trr = 3.0 ns MAX.
|
TY Semiconductor Co., Ltd
|
