| PART |
Description |
Maker |
| TC58DVM92A1FT00 TC58DVM92A1FT |
Flash - NAND
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MIP0221SY MIP0222SY MIP0223SY MIP0224SY MIP0225SY |
Silicon MOS IC
ISOLATOR, INT'LOCK 25A 3 POLEISOLATOR, INT'LOCK 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:13kW
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| AM3064-70/BZC AM3064-50GI175 AM3064-50JC068 AM3090 |
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
DIE SALE, 2.7V, 7 MIL(BIOS FLASH)
10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH)
8-SOIC,AUTO TEMP,2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE)
10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE)
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
|
Stackpole Electronics, Inc.
Ecliptek, Corp.
Analog Devices, Inc.
Glenair, Inc.
|
| CY7C68034-56LTXC CY7C6803309 CY7C68034-56LFXC |
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller FLASH MEMORY DRIVE CONTROLLER, QCC56
EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
|
Cypress Semiconductor, Corp.
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash
|
Hynix Semiconductor
|
| 54MT80KB 54MT100KB 54MT120KB 54MT140KB 54MT160KB 1 |
THREE PHASE AC SWITCH
800V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
IRF[International Rectifier]
|
| M54HC423 M54HC423A M54HC423AB1R M54HC423AC1R M54HC |
12-Bit DAC Parallel Voltage Out Pgrmable Int Ref Settling Time, Pwr Consumption, 8-bit uC Comp Int 20-TSSOP -40 to 85 双RETRIGGERABLE单稳态触发器
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| GA250TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
IRF[International Rectifier]
|
| LPC3240FET296 |
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, Ethernet 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
|
NXP Semiconductors N.V.
|
|
