| PART |
Description |
Maker |
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| KM6161000B |
64K x16 Bit Low Power CMOS Static RAM(64K x16浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| BS616LV1010ACP75 BS616LV1010ACG75 BS616LV1010AIP75 |
Very Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| BS616LV1010AI55 BS616LV1010ECG70 BS616LV1010DIP55 |
Very Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
|
| BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV101 |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| KM6161000B |
64K X 16-Bit Low Power CMOS Static RAM
|
Samsung Electronics
|
| KM68512A |
64Kx8 bit Low Power CMOS Static RAM(64K x 8位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT28LV64B DOC233 AT28LV64B-20JC AT28LV64B-20TC AT2 |
64K (8K x 8) Low Voltage CMOS
From old datasheet system
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
|
ATMEL[ATMEL Corporation]
|
| CAT28LV64GI-20T CAT28LV64GI-15T CAT28LV64GA-20T CA |
DC-DC Converter, 2Watt, Input VDC: 5, Output VDC: 15, Max Output Current(A): 0.133, Package: SIP4, Isolation(VDC): 1000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Plastic Case, Single Output
64K-Bit CMOS PARALLEL EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
8K X 8 EEPROM 3V, 200 ns, PDIP28
64K-Bit CMOS PARALLEL EEPROM
|
http://
EEPROM
Abracon, Corp.
Coilcraft, Inc.
Vishay Intertechnology, Inc.
Vicor, Corp.
Catalyst Semiconductor
|
| KM64258C |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
