| PART |
Description |
Maker |
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| H27U4G6F2D H27U4G8F2D H27U4G8F2DKA-BM H27U4G8F2DTR |
4 Gbit (512M x 8 bit) NAND Flash
|
Hynix Semiconductor
|
| TC58NVG6D2GTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG2S3ETA00 |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| FM93C56EM8 FM93C56LMT8 FM93CS56LMT8 FM93CS56LEM8 F |
(MICROWIRE??Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
RES, 0603, SMD, 0.1%, TKF 11.8K
(MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
2048-Bit Serial CMOS EEPROM With Data Protect and Sequential Read(带连续读操作和数据保护的2048位串行CMOS EEPROM)
(MICROWIRE?/a> Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE?Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
|
| AM2716B AM2716B-100DC AM2716B-100DE AM2716B-100DI |
2048 x 8 Bit / 4096 x 8 Bit EPROM
(AM2732B) 2048 x 8 Bit EPROM
2048 X 8 - BIT / 4096 X 8 - BIT EPROM
|
Advanced Micro Devices
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
