| PART |
Description |
Maker |
| OMD60L60FL OMD150N06FL |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五（巴西）国际消费电子展| 75A条一c
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
|
Unisonic Technologies Co., Ltd.
|
| APTGT35X120RTP3 APTGT35X120BTP3 |
Input rectifier bridge Brake 3 Phase Bridge Trench IGBT Power Module
|
Advanced Power Technology Ltd.
|
| BSM10GD60DN2 C67076-A2508-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| APTGT50X170BTP3 |
Input rectifier bridge Brake 3 Phase Bridge Trench IGBT Power Module 输入整流桥制动三相桥沟道IGBT功率模块
|
Advanced Power Technology, Ltd.
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| APTDC30H601G |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
SiC Diode Full Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| APTDF200H170G |
Diode Full Bridge Power Module 240 A, 1700 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| APTGT75H60T1G |
Full - Bridge Trench Field Stop IGBT? Power Module
Full - Bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT25H120T1G |
Full - Bridge Fast Trench Field Stop IGBT? Power Module
Full - Bridge Fast Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| APTDF200H100 APTDF200H100G |
255 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Fast Diode Rectifier Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
