| PART |
Description |
Maker |
| 3DD5287C-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287C FOR LOW FREQUENCY
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287C FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5023-O-HF-N-B 3DD5023 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010A-O-A-N-D 3DD5310A |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5032 3DD5032-O-A-N-D 3DD5032-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PH20KPBF IRG4PH20KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| IRG4BC30KDPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT
|
International Rectifier
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| BUZ101S Q67040-S4013-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
SIPMOS ? Power Transistor
INDUCTOR SHIELDED 470UH 20% SMT
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
http://
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
