| PART |
Description |
Maker |
| BS62LV256SIP55 BS62LV256SC70 BS62LV256SIP70 BS62LV |
Very Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconductor
|
| UT62256BLS-35LL UT62256BLS-35L UT62256BLS-70L UT62 |
32K X 8 BIT LOW POWER (6T) CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| AS6C62256 |
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| BS62LV256S BS62LV256TC BS62LV256SC BS62LV256TI BS6 |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AM27X256 AM27X256-120JC AM27X256-120JI AM27X256-12 |
32K X 8 OTPROM, 250 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 70 ns, PQCC32
CMOS Dual Monostable Multivibrator 16-PDIP -55 to 125 32K X 8 OTPROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 120 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 120 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 55 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 250 ns, PQCC32
CMOS Analog Multiplexer/Demultiplexer 24-TSSOP -55 to 125
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| BS62UV256DIG10 BS62UV256DIG15 BS62UV256PIG10 BS62U |
Ultra Low Power CMOS SRAM 32K X 8 bit
Ultra Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| LP61L256B LP61L256BS-12 LP61L256BV-12 |
32K X 8 Bit High SPEED LOW VCC CMOS SRAM
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| BS62UV256SCP10 BS62UV256SCP15 BS62UV256TIP10 BS62U |
Ultra Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| CAT25C32PSE-1.8TE13 CAT25C32VSI-1.8TE13 CAT25C32Y1 |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS
|
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
BCD Semiconductor Manufacturing, Ltd.
|
| P87C58X2FA P87C52 P87C54 80C52 80C52X2 P80C31X2 P8 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz 8-BIT, MROM, 33 MHz, MICROCONTROLLER, PQFP44
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz 80C51位单片机系列4K/8K/16K/32K的ROM / RAM的检察官办公28B/256B低电.7.5 V，低功耗，高33分之30兆赫
80C51 8-bit microcontroller family 4K-8K-16K-32K ROM-OTP 128B-256B RAM low voltage (2.7 to 5.5 V), low power, high speed (30-33 MHz)
|
存储
NXP Semiconductors N.V.
|
