| PART |
Description |
Maker |
| K8P2716UZC |
128Mb C-die Page NOR Flash
|
Samsung semiconductor
|
| K4S281632K |
128Mb K-die SDRAM Specification
|
Samsung semiconductor
|
| K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S2816 |
128Mb E-die SDRAM Specification 128Mb的电子芯片内存规
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4 |
128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM
128Mb (2MBank6) Synchronous DRAM 128Mb的（200万Bank6）同步DRAM
128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| DOM40S6R1.5G |
40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface
|
Hanbit Electronics Co.,Ltd.
|
| HFDOM40S6RXXX DOM40S6R1.5G DOM40S6R128 DOM40S6R1G |
40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| MT28C128532W18 |
(MT28C128532W18 / MT28C128564W18) 128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory
|
Micron Technology
|
| K8P5516UZB |
256Mb B-die NOR FLASH
|
Samsung semiconductor
|
| HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs
SDRAM Components - 128Mb (16Mx8) PC133 3-3-3
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3
SDRAM Components - 128Mb (32Mx4) PC133 3-3-3
128-MBit Synchronous DRAM
|
Infineon
|
| K8P5616UZB |
256Mb B-die Page NOR FLASH
|
Samsung semiconductor
|
