| PART |
Description |
Maker |
| 3DD1555A 3DD1555A-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010A-O-A-N-D 3DD5310A |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5040 3DD5040-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PC40KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRG4BC30KDPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT
|
International Rectifier
|
| BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| BUZ100S Q67040-S4001-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
SIPMOS ? Power Transistor
|
SIEMENS AG
Siemens Semiconductor Group
Infineon
http://
|
