| PART |
Description |
Maker |
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| CY7C1020CV33-15ZSXE CY7C1020CV33-15ZSXET |
512 K (32 K ? 16) Static RAM
512 K (32 K × 16) Static RAM
|
Cypress Semiconductor
|
| CY62148ESL-55ZAXAT CY62148ESL-55ZAXI CY62148ESL-55 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62157E |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62148EV30LL-55ZSXET |
4-Mbit (512 K x 8) Static RAM
|
Cypress
|
| CY7C1020BN-12VXCT CY7C1020BN-15ZXC CY7C1020BN-12ZC |
32K x 16 Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 4.5 to 5.5 V; 32K X 16 STANDARD SRAM, 12 ns, PDSO44
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
32K x 16 Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 4.5 to 5.5 V;
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| PUMA68S16000XBI-012 PUMA68S16000XBI-015 PUMA68S160 |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PQMA68
512 K x 32 Static RAM
|
MOSAIC
|
| IDT70T3319S133BC IDT70T3399S200DDI IDT70T3319S133B |
From old datasheet system
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| CY7C0430V 7C0430V CY7C0430V-133BGI CY7C0430V-133BG |
3.3V 64K x 18 Synchronous QuadPort⑩ Static RAM
3.3V 64K X 18 SYNCHRONOUS QUADPORT⒙ STATIC RAM
From old datasheet system
3.3V 64K x 18Synchronous QuadPort?Static RAM
|
CYPRESS[Cypress Semiconductor]
|
