| PART |
Description |
Maker |
| CGY1032 |
1 GHz, 32 dB gain GaAs push-pull amplifier 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| ACA2764 |
1 GHz, 21 dB Gain CATV Push-Pull Amplifier
|
ANADIGICS, Inc
|
| MC-7831-HA MC-7831-HA-AZ |
NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER
|
CEL[California Eastern Labs]
|
| S10040230GT |
GaAs Push Pull Hybrid 40 - 1000MHz 23.5dB min. Gain @ 1GHz 250mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| HMC754S8GE |
GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz
|
Hittite Microwave Corporation
|
| S10040280GT |
GaAs Push Pull Hybrid 40 - 1000MHz 28.0dB min. Gain @ 1000MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S8740220P |
GaAs Push Pull Hybrid 40 - 870MHz 22dB min. Gain @ 870MHz 270mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S8740280GT |
GaAs Push Pull Hybrid 40 - 870MHz 28.0dB min. Gain @ 870MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S8740260GT |
GaAs Push Pull Hybrid 40 - 870MHz 26.0dB min. Gain @ 870MHz 240mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
