| PART |
Description |
Maker |
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
| IHW15N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| IHW15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKP10N60T07 |
TrenchStop Series
|
Infineon Technologies AG
|
| IGW15T120 IGW15T12009 |
TrenchStop Series
|
Infineon Technologies AG
|
| IGB50N60T IGB50N60T09 |
Low Loss IGBT in TrenchStop technology
|
Infineon Technologies AG
|