| PART |
Description |
Maker |
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2N6473 2N6474 2N6476 2N6475 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| CFD2059R CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
|
Continental Device India Limited
|
| 2N5883 |
Complementary Silicon PNP Power Transistor(25A00W0V（集电极-发射极），补偿型PNP功率晶体 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| 2N5883G 2N5884 2N5884G 2N5885G 2N5886G 2N5883 2N58 |
Complementary Silicon High−Power Transistors 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
Complementary Silicon High−Power Transistors
|
Rectron Semiconductor
ONSEMI[ON Semiconductor]
|
| D45C-D |
Complementary Silicon Power Transistor
|
ON Semiconductor
|
| CJD210 CJD200 |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CJD3055 CJD2955 |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2SA900 2SA0900 |
For low-frequency Power amplification Complementary 1 A, 18 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
|
