| PART |
Description |
Maker |
| FSAV430MTCX FSAV430QSCX |
Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video Switch
|
Fairchild Semiconductor
|
| XE1205I074TRLF |
180 MHz - 1GHz Low-Power, High Link Budget Integrated UHF Transceiver
|
Semtech Corporation
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| HA3004 |
3.1GHz - 3.5GHz Low Noise Amplifier
|
HBH Microwave GmbH
|
| NJG1105F |
1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| SA621DH SA621 |
From old datasheet system
1GHz - Low voltage LNA, mixer and VCO
|
PHILIPS[Philips Semiconductors]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| LTC5507 LTC5507ES6 |
100kHz to 1GHz RF Power Detector
|
Linear Technology
|
