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MRFG35003ANT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35003ANT1_4927863.PDF Datasheet


 Full text search : Gallium Arsenide PHEMT RF Power Field Effect Transistor
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IXYS, Corp.
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27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE

ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 ER 2C 2#16S PIN RECP BOX
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HP[Agilent(Hewlett-Packard)]
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KODENSHI[KODENSHI KOREA CORP.]
KODENSHI, CORP.
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Agilent(Hewlett-Packard)
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