| PART |
Description |
Maker |
| ISL29038 |
Low Power Ambient Light and Proximity Sensor with Enhanced Infrared Rejection
|
Intersil Corporation
|
| PM9311-UC PM9312-UC PM9315-HC PM9313 PM9313-HC |
ENHANCED TT1SWITCH FABRIC SPECIALTY TELECOM CIRCUIT, CBGA624
ENHANCED TT1 SWITCH FABRIC
|
PMC-Sierra, Inc.
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter
Infrared LED GaA??s Infrared Emitter
Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
| EL5205IY-T13 EL5205 EL5104 EL5304 EL5205IS EL5205I |
700MHz Slew Enhanced VFA
700MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO10
700MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
700MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO16
Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:22-55
|
Intersil, Corp.
音频／视频放
INTERSIL[Intersil Corporation]
http://
|
