| PART |
Description |
Maker |
| EPC-1300-1.0-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-2.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-440-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-740-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.5-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-440-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.22-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-107-1 |
1.25G InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG Siemens Semiconductor Group
|
| S5106 S5107 S7509 S7510 |
Si PIN photodiode Chip carrier package for surface mount
|
Hamamatsu Corporation
|