| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| CTS05S30 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
| MA3ZD12W |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| DSR05S30CTB |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| 1SS294 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RB551V-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| HN20S01F |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
| RB500V-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RB161L-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
