| PART |
Description |
Maker |
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M470L6423CK0 |
64Mx64 200pin DDR SDRAM SODIMM based on DDP 64Mx8 Data Sheet
|
Samsung Electronic
|
| NT256D64S88A2GM-8B NT256D64S88A2GM NT256D64S88A2GM |
200pin One Bank Unbuffered DDR SO-DIMM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| HYMD512M646BLF8-D43 HYMD512M646BLF8-H HYMD512M646B |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)
|
Hynix Semiconductor
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYMD18M645AL6-H HYMD18M645AL6-K HYMD18M645A6-H HYM |
SDRAM|DDR|8MX64|CMOS|DIMM|200PIN|PLASTIC
8M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| V43644Y04VCTG-75 |
3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V82658B04S |
64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V436516Z04VTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic Corp
|
| M464S0924FTS M464S0924FTS-CL7A M464S1724FTS-C_L7A |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
