| PART |
Description |
Maker |
| V2-EVAL-EXT32 V2-EVAL-EXT48 V2-EVAL-EXT64 |
Vinculum II Evaluation Board
|
Future Technology Devices International Ltd.
|
| VPROG-1 |
Vinculum Host Controller Programmer
|
Future Technology Devic...
|
| EV42-160-22-SERIES EV44-100-22-SERIES EV44-160-22- |
TLC2555 Evaluation Module
TLC4545 Evaluation Module
TLC2551 Evaluation Module
CC1000DK-868/915 MHz Development Kit
CC2400DK Development Kit
TPA0172 Evaluation Module
Radiomodem 433 MHz
CC2400DBK Demonstration Board Kit
CC1000PP 433 MHz Plug and Play Module
Digital Data Capture and Analysis for High Speed, High Resolution A to D Converters
ADS1244 Evaluation Module
SN65HVD22EVM Evaluation Module
Peripheral IC 外围芯片
|
Infineon Technologies AG
NXP Semiconductors N.V.
Amphenol, Corp.
Xicon Passive Components
Electronic Theatre Controls, Inc.
|
| WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛?
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛?
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
|
White Electronic Designs Corporation
|
| HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| Q67100-Q2009 Q67100-Q2010 321160X HYM321160GS-60 H |
1M x 32 Bit DRAM Module
From old datasheet system
1M x 32-Bit Dynamic RAM Module 1M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020 |
4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 36 Bit FPM DRAM Module with Parity
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYS72V8000GU-10 HYS64V8000GU-10 HS648000 HYS64V800 |
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module 8M X 72 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| GBPC2501 GBPC2510 GBPC2508 GBPC25005 GBPC2502 GBPC |
50-A, 8-V to 14-V Input, Non-Isolated, Wide Output Adjust, Vertical Power Module w/ TurboTrans Techn 21-DIP MODULE -40 to 85 单相玻璃钝化整流
1.2 to 5.5 V 16-A, 12-V Input, Non-Isolated Wide-Adjust SIP Module 12-SIP MODULE -40 to 85
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 25 Amperes)
|
Shanghai Sunrise Electronics Co., LTD.
SSE[Shanghai Sunrise Electronics]
Pan Jit International Inc.
|
