| PART |
Description |
Maker |
| EPC-525-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-3.0-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-3.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S8865-64 S8865-128 S8865 |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| S5106 S5107 S7509 S7510 |
Si PIN photodiode Chip carrier package for surface mount
|
Hamamatsu Corporation
|
| S8865-256G |
Photodiode array combined with signal processing circuit chip 光电二极管阵列结合信号处理集成电路芯
|
Hamamatsu Photonics K.K.
|
| PNZ331CL |
PIN Photodiode FIBER OPTIC PHOTODIODE DETECTOR, THROUGH HOLE MOUNT, TO-18
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Corporation
|
