| PART |
Description |
Maker |
| ND31381A ND31381B ND31381 ND31382 ND31382A ND31382 |
S TO K-BAND GaAs VARACTOR DIODE
|
NEC
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| ND3139-5S ND3139-5M ND3139-5N |
MM WAVE GaAs VARACTOR DIODE 毫米波砷化镓变容二极
|
NEC Corp.
NEC, Corp.
|
| MA46485 MA46410 MA46410_1 MA46413 MA46416 MA46418 |
GaAs Hyperabrupt Varactor Diode Gamma= 1.0, 1.25 & 1.50
|
MACOM[Tyco Electronics]
|
| MV21003 MV21001 MV21002 MV21004 MV21005 MV21006 MV |
GaAs Varactor Diodes Abrupt Junction
|
Microsemi Corporation
|
| SCP-5760 |
GaAs CONSTANT GAMMA HYPERABRUPT VARACTOR DIODE
|
Sensitron
|
| SVD302 |
Hyperabrupt Junction Type GaAs Varactor Diode
|
Sanyo
|
| MA46580 |
(MA46580 / MA46585) Beam Lead Constant Gamma GaAs Tuning Varactor
|
Tyco Electronics
|
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
