| PART |
Description |
Maker |
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com
SIRENZA MICRODEVICES
|
| SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
