| PART |
Description |
Maker |
| APT20GN60B APT20GN60BG APT20GN60S APT20GN60SG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| APT30GS60SRDQ2 APT30GS60SRDQ2G APT30GS60BRDQ2 APT3 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT20GT60AR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 30A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT8GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 17A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STGW45HF60WD |
ultra fast IGB
|
ST Microelectronics
|
| FGH40N120AN |
High speed switching
1200V NPT IGBT
|
Fairchild Semiconductor
|
| SKW30N60HS Q67040-S4503 |
From old datasheet system
HIGH SPEED IGBT IN NPT-TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| PS2832 PS2832-1 PS2832-1-F3 PS2832-1-F4 PS2832-1-V |
CONN CABLE ADPT PG 21/NPT 3/4,1 高隔离电压高集电极到发射极电压专科多光耦合
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI OPTOCOUPLER 高隔离电压高集电极到发射极电压专科多光耦合
CONN CABLE ADPT PG 13.5/NPT 1/2,1
CONN CABLE ADPT PG 16/NPT 1/2,1
Power Resistor; Series:MK; Resistance:1kohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
