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0405SC-1000M - SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

0405SC-1000M_4807062.PDF Datasheet
 
Part No. 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-1000M
Description SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
File Size 285.13K  /  5 Page  

Maker

Microsemi, Corp.
Microsemi Corporation

Homepage http://www.microsemi.com
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 Full text search : SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
 Product Description search : SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

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