| PART |
Description |
Maker |
| 30FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| U30FWJ2C53M |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Low Forward Voltage Schottky Barrier Type Switching Mode Power Supply Application Converter&Chopper Application
|
TOSHIBA
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| PMEG1020EJ PMEG1020EH |
PMEG1020EJ; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD323F package
PMEG1020EH; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD123F package
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
|
PHILIPS[Philips Semiconductors]
|
| SBR2080R |
20.0 Amp Low VF Schottky Barrier Rectifiers
Voltage 80V 20.0Amp Low VF Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| CDBM220L-HF CDBM230L-HF CDBM240L-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=40V, V-R=40V, I-O=2A
Halogen Free Low VF Schottky Barrier, V-RRM=30V, V-R=30V, I-O=2A
Halogen Free Low VF Schottky Barrier, V-RRM=20V, V-R=20V, I-O=2A
Low VF SMD Schottky Barrier Rectifiers
|
Comchip Technology
|
| 5082-2271 50822271 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| KDR411S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
