| PART |
Description |
Maker |
| AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7
M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
Xicon Passive Components
Amphenol, Corp.
|
| KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 29C256 AT29C256-15 AT29C256-70TC AT29C256-90PC AT2 |
256K 32K x 8 5-volt Only CMOS Flash Memory
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SO -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-PDIP -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
|
Atmel Corp.
|
| LY61L25616GL-10LL LY61L25616GL-12LLET LY61L25616GL |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM
256K (128K x 8) OTP CMOS EPROM
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85
8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]
4,194,304-Bit (256k x 16) High Performance CMOS EPROM
4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM
4,194,304位（256k × 16）高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
|
