| PART |
Description |
Maker |
| UPA806T UPA806T-T1 UPA806 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
|
NEC Corp.
NEC[NEC]
http://
|
| UPA809 UPA809T UPA809T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 微波低噪声放大器NPN硅外延晶体管，内个元素迷你模
|
NEC, Corp.
NEC[NEC]
|
| BBY53-03W Q62702-B0825 BBY5303W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY52-03W BBY5203W Q62702-B664 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 4.60 inch width x 2.37 inch depth, Black Textured Finish
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MC44871DTB MC44871 ON1151 |
PLL TUNING CIRCUIT WITH HIGH SPEED I2C BUS AND 30 V TUNING SUPPLY
From old datasheet system
|
Motorola, Inc
ON Semi
|
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY55-02W BBY5502W Q62702-B0913 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（极好的线性高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CU41K2B1P-902.5-1T CU41K2A1P-902.5-1T CU41K2B1P-14 |
890 MHz - 915 MHz RF/MICROWAVE ISOLATOR
1429 MHz - 1453 MHz RF/MICROWAVE ISOLATOR
100 MHz - 200 MHz RF/MICROWAVE 3 PORT CIRCULATOR
872 MHz - 905 MHz RF/MICROWAVE ISOLATOR
940 MHz - 960 MHz RF/MICROWAVE ISOLATOR
|
Samtec, Inc.
|
| HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
| ST6385 ST6387 ST6367 ST63E85D1 ST63E87D1 ST6377 ST |
8-BIT MICROCONTROLLER (MCU) WITH ROM, EPROM, OTP AND ON SCREEN DISPLAY FOR TV TUNING
8-BIT MCUs WITH ON-SCREEN-DISPLAY FOR TV TUNING
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
