| PART |
Description |
Maker |
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| STD2NK100Z STU2NK100Z STP2NK100Z |
N-channel 1000 V, 6.25 Ohm, 1.85 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| IXGD8N100-2L |
1000 V, N-CHANNEL IGBT
|
IXYS CORP
|
| IXTD2N100-3T |
1000 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| SKM191 |
28 A, 1000 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SEMIKRON INTERNATIONAL
|
| MIC94031BM4 MIC94030BM4 |
1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANDISK CORP
|
| SDF12N100GAFEHSN |
12 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SOLITRON DEVICES INC
|
| APT10026JFLL_03 APT10026JFLL APT10026JFLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MTH6N100 |
6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
MOTOROLA INC
|
|
