| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-850L |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| PDI-E825 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
| OD663-850 |
HIGH-POWER GaAlAs IRLED ILLUMINATOR
|
OptoDiode Corp
|
| PDI-E835 |
GaAlAs High power IR LED Emitters (660nm/940nm)
|
Advanced Photonix, Inc.
|
| PDI-E837 |
GaAlAs High power IR LED Emitters (660nm/880nm)
|
Advanced Photonix, Inc.
|
| PDI-E833 |
GaAlAs High power IR LED Emitters (660nm/940nm)
|
Advanced Photonix, Inc.
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL510009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
