| PART |
Description |
Maker |
| MMBD354LT1 |
Dual Hot Carrier Mixer Diodes(双热载流子混频器二极 SILICON, UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| Q62702-F1582 BF569W Q62702-F1322 |
From old datasheet system
PNP Silicon RF Transistor (For oscillators mixer and self-oscillating mixer stages in UHF TV-tuner)
PNP Silicon RF Transistor kein Status
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner)
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPN硅射频晶体管（低失真输出天线的宽带和电信放大级）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| HJK-20VH |
Frequency Mixer 1090 MHz - 1950 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| LAVI-17VH |
Frequency Mixer 470 MHz - 1730 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.9 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| HMC215LP411 HMC215LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz
1700 MHz - 4000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 11 dB CONVERSION LOSS-MAX
|
Hittite Microwave Corporation
|
| HSB88WS |
Schottky Barrier Diodes for Detection and Mixer
Silicon Schottky Barrier Diode for Balanced Mixer
|
HITACHI[Hitachi Semiconductor]
|
| 1N415GM 1N21WG 1N416G 1N415H |
Diode RF Mixer PN Mixer
|
New Jersey Semiconductor
|
| HMMC-3040 |
20 - 43 GHz double balanced mixer and LO amplifier 20 - 43 GHz的双平衡混频器和LO放大
20-43 GHz Double-Balanced Mixer and LO-Amplifier
HMMC-3040 · 20 - 43 GHz double balanced mixer and LO amplifier
|
Switchcraft, Inc.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| 1N23WG ASI1N23WG |
SILICON MIXER DIODE SILICON, X-KU BAND, MIXER DIODE, DO-23
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
