| PART |
Description |
Maker |
| US1A US1B |
1.0AMP High Efficient Surface Mount Rectifiers
|
TAIWAN SEMICONDUCTOR
|
| HER103G HER107G HER101G HER108G |
1.0AMP. Glass Passivated High Efficient Rectifiers
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| HS2K DO-214AA |
2.0AMP. High Efficient Surface Mount Rectifiers
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| HERAF808G HERAF80XG HERAF801G HERAF802G HERAF803G |
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers 隔离8.0安培。玻璃钝化高效整流二极管
From old datasheet system
Rectifier: High Efficient
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| UF4001 UF4005 UF4004 UF4007 |
1.0AMP. Ultrafast Rectifiers（GPP）
1.0AMP. Ultrafast Rectifiers（GPP?/a>
1.0AMP. Ultrafast Rectifiers锛?PP锛?/a>
1.0AMP. Ultrafast Rectifiers拢篓GPP拢漏
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| KBP206 KBP208 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIE
|
Yea Shin Technology Co., Ltd
|
| SEF101B SEF102B SEF103B SEF104B SEF105B SEF106B |
1.0AMP High Efficiency Recovery Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SEF301C |
(SEF301C - SEF306C) 3.0AMP High Efficiency Recovery Rectifiers
|
SeCoS
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
