| PART |
Description |
Maker |
| M25P40-VMN M25P40-VMN6T M25P40-VMW6T -M25P40-VMN6T |
4 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
意法半导
STMicroelectronics N.V.
|
| M45PE40 M45PE40-VMP6G M45PE40-VMP6TG M45PE40-VMP6T |
4 Mbit Uniform Sector, Serial Flash Memory
From old datasheet system
4 MBIT, LOW VOLTAGE, PAGE-ERASABLE SERIAL FLASH MEMORY WITH BYTE-ALTERABILITY AND A 33 MHZ SPI BUS INTERFACE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
|
| M25P20-VMN6T M25P20-VMW6T |
2 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory
|
STMicroelectronics
意法半导
|
| M25P64-VMF6TP M25P64-VME6 M25P64-VMF6 M25P64 M25P6 |
16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85
4 Mbit Uniform Sector, Serial Flash Memory
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M25P16-VME6G M25P16-VME6TG M25P16-VMF6P M25P16-VMF |
16 Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
16 Mbit/ Low Voltage/ Serial Flash Memory With 50 MHz SPI Bus Interface
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| PM25LD512 PM25LD010 PM25LD020 |
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
|
Chingis Technology
|
| F28F008SA-120 E28F008SA-120 E28F008SA-85 F28F008SA |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 8兆（1兆位× 8FlashFileTM记忆
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 120 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 85 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
