| PART |
Description |
Maker |
| PTFA182001E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
|
Infineon Technologies AG
|
| PTFA181001E |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| PTFA181001GL PTFA181001HL |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| PXFC191507FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
| MAFR-000055-DS1S1R |
Single Junction Robust Lead Isolator 1805 MHz-1880 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| MHL18926 |
MHL18926 1805-1880 MHz, 10 W, 28.6 dB RF Linear LDMOS Amplifier
|
Motorola
|
| PTMC210404MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| PH1819-33 PHL819-33 |
WIRELESS POWER TRANSISTOR 33W
Wireless Power Transistor, 33W 1805 - 1880 MHz
Wireless Power Transistor/ 33W 1805 - 1880 MHz
|
Tyco Electronics
|
| EPF8058S |
10/100 Base-X Module for ICS 1890 & SSI 78Q2120 Multi-Port Applications
|
PCA ELECTRONICS INC.
|
