| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIA1314-4P |
13.75-14.5 GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIC7179-12 |
7.10-7.90 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1112A1-8 |
11.70-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1314A1-8 |
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010-8 |
10.00-10.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010A-20 |
10.00-10.25 GHz 20-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC7177-10 |
7.10-7.70 GHz 10-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-15 EIC8596-15NH |
8.50-9.60 GHz 15-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
| EIC1212-4 |
12.20-12.70 GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1212-8 |
12.20-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
