
	Part Number	Hot Search : C5386 20ETT KDS187 AKD43 020B2 M8G48 MBR20 TXXFD1
	Product Description
	Full Text Search

M52D16161A09 - 512K x 16Bit x 2Banks Mobile Synchronous DRAM

M52D16161A09_4747470.PDF Datasheet


Part No.	M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A
Description	512K x 16Bit x 2Banks Mobile Synchronous DRAM
File Size	875.12K / 32 Page
Maker	Elite Semiconductor Memory ... Elite Semiconductor Memory Technology Inc.
Homepage	http://www.esmt.com.tw/index.asp
Download	[ M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A Datasheet PDF Downlaod from Datasheet.HK ] [M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for M52D16161A09 ] [ Price & Availability of M52D16161A09 by FindChips.com ]

Full text search : 512K x 16Bit x 2Banks Mobile Synchronous DRAM

Product Description search : 512K x 16Bit x 2Banks Mobile Synchronous DRAM

Related Part Number

PART	Description	Maker
M52S32162A-6BG M52S32162A-6TG M52S32162A08 M52S321	1M x 16Bit x 2Banks Mobile Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M12S16161A-15T M12S16161A-15TG	512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L161	512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc. ETC
T431616D T431616D-5C T431616D-5CG T431616D-5S T431	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM	Taiwan Memory Technology
M12L16161A-6T M12L16161A-8T M12L16161A-5.5T M12L16	CONNECTOR ACCESSORY 512K x 16Bit x 2Banks Synchronous DRAM 12k × 16Bit的X 2Banks同步DRAM	Electronic Theatre Controls, Inc.
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A	Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM	AMIC Technology
M52S32162A-10BIG M52S32162A-10TIG M52S32162A-7.5BI	1M x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M52S32321A-7.5BG M52S32321A M52S32321A-10BG M52S32	512K x 32Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M12L32321A-7BG M12L32321A-5.5BG M12L32321A-6BG	512K x 32Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
RMS132UAF-10E RMS132UAF-6E RMS132UAF-75E	512K x 32Bits x 2Banks Low Power Synchronous DRAM	Emerging Memory & Logic Solutions Inc
K4M56163LG K4M56163LG-RN_F75 K4M56163LG-RN_G K4M56	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA	Samsung semiconductor

Related keyword From Full Text Search System

M52D16161A09 Semiconductors	M52D16161A09 integrated circuit	M52D16161A09 ocr	M52D16161A09 tdma modulator	M52D16161A09 中文
M52D16161A09 Channel	M52D16161A09 Marin	M52D16161A09 技术参数	M52D16161A09 integrated circuit	M52D16161A09 technology