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HN4B101J - Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

HN4B101J_4745139.PDF Datasheet


Part No.	HN4B101J
Description	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
File Size	239.71K / 6 Page
Maker	Toshiba, Corp. Toshiba Semiconductor
Homepage	http://www.semicon.toshiba.co.jp/eng/
Download	[ HN4B101J Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ HN4B101J Datasheet PDF Downlaod from Datasheet.HK ] [HN4B101J Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for HN4B101J ] [ Price & Availability of HN4B101J by FindChips.com ]

Full text search : Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

Product Description search : Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

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1N5988 1N5993 1N5987 1N5989 1N5997 1N5996 1N6029 1	From old datasheet system Axial-Leaded 500 mW Zener Diodes SILICON 500 mW ZENER DIODES 3.3V Input to Regulated 5V Output Charge Pumps Static Protection Wrist Grounder; Body Material:Fabric RoHS Compliant: NA Zener Voltage Regulator Diode 8.2 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 180 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 33 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 39 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 15 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 100 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Insulating Tape; Peak Reflow Compatible (260 C):No 27 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH	MICROSEMI CORP-LAWRENCE MICROSEMI CORP-SCOTTSDALE MICROSEMI[Microsemi Corporation] Microsemi, Corp.
DF2S5.6FS	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
CMF02	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Switching Mode Power Supply Applications	Toshiba Corporation Toshiba Semiconductor

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